? semiconductor components industries, llc, 2006 january, 2006 ? rev. 9 1 publication order number: mje171/d MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) preferred device complementary plastic silicon power transistors the MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. features ? collector?emitter sustaining voltage ? v ceo(sus) = 40 vdc ? MJE170, mje180 = 60 vdc ? mje171, mje181 = 80 vdc ? mje172, mje182 ? dc current gain ? h fe = 30 (min) @ i c = 0.5 adc = 12 (min) @ i c = 1.5 adc ? current?gain ? bandwidth product ? f t = 50 mhz (min) @ i c = 100 madc ? annular construction for low leakages ? i cbo = 100 na (max) @ rated v cb ? epoxy meets ul 94 v?0 @ 0.125 in ? esd ratings: machine model, c human body model, 3b ? pb?free packages are available* ???????????????????? ???????????????????? maximum ratings ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ? ?????????? ? ???????????? collector?base voltage MJE170, mje180 mje171, mje181 mje172, mje182 ???? ? ?? ? ???? v cb ???? ? ?? ? ???? 60 80 100 ??? ? ? ? ??? vdc ???????????? ? ?????????? ? ? ?????????? ? ???????????? collector?emitter voltage MJE170, mje180 mje171, mje181 mje172, mje182 ???? ? ?? ? ? ?? ? ???? v ceo ???? ? ?? ? ? ?? ? ???? 40 60 80 ??? ? ? ? ? ? ? ??? vdc ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ???? ? ?? ? ???? 1.5 0.012 ??? ? ? ? ??? w w/ c ???????????? ???????????? c derate above 25 c ???? ???? ???? ???? ??? ??? c ???????????? ???????????? ???? ???? ???? ???? ??? ??? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?225aa case 77?09 style 1 3 amperes power transistors complementary silicon 40 ? 60 ? 80 volts 12.5 watts 3 2 1 preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information http://onsemi.com marking diagram yww je1xxg y = year ww = work week je1xx = specific device code x = 70, 71, 72, 80, 81, or 82 g = pb?free package
MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case jc 10 c/w thermal resistance, junction?to?ambient ja 83.4 c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter sustaining voltage MJE170, mje180 (i c = 10 madc, i b = 0) mje171, mje181 mje172, mje182 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 40 60 80 ??? ? ? ? ??? ? ? ???? ? ?? ? ???? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 60 vdc, i e = 0) MJE170, mje180 (v cb = 80 vdc, i e = 0) mje171, mje181 (v cb = 100 vdc, i e = 0) mje172, mje182 (v cb = 60 vdc, i e = 0, t c = 150 c) MJE170, mje180 (v cb = 80 vdc, i e = 0, t c = 150 c) mje171, mje181 (v cb = 100 vdc, i e = 0, t c = 150 c) mje172, mje182 ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? ? ? ? ? ? ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? 0.1 0.1 0.1 0.1 0.1 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? adc madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 7.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ??? ? ? ? ??? 0.1 ???? ? ?? ? ???? adc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 100 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 1.0 vdc) (i c = 1.5 adc, v ce = 1.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 50 30 12 ??? ? ? ? ??? 250 ? ? ???? ? ?? ? ???? ? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.5 adc, i b = 150 madc) (i c = 3.0 adc, i b = 600 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? ? ? ? ??? ? ? ? ? ? ? ??? 0.3 0.9 1.7 ???? ? ?? ? ? ?? ? ???? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? base?emitter saturation voltage (i c = 1.5 adc, i b = 150 madc) (i c = 3.0 adc, i b = 600 madc) ????? ? ??? ? ? ??? ? ????? v be(sat) ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 1.5 2.0 ???? ? ?? ? ? ?? ? ???? vdc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current?gain ? bandwidth product (note 1) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 50 ??? ? ? ? ??? ? ???? ? ?? ? ???? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mje171/mje172 mje181/mje182 ????? ? ??? ? ????? c ob ??? ? ? ? ??? ? ? ??? ? ? ? ??? 60 40 ???? ? ?? ? ???? pf 1. f t = ? h fe ?? f test .
MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) http://onsemi.com 3 14 20 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 10 8.0 t c 6.0 12 p d , power dissipation (watts) 2.8 0 2.0 1.6 t a 1.2 2.4 4.0 0.8 2.0 0.4 80 140 t c t a figure 2. switching time test circuit +11 v 25 s 0 ?9.0 v r b ?4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities. 1k i c , collector current (amps) v ce = 30 v i c /i b = 10 v be(off) = 4.0 v t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 3. turn?on time 3 2 5 2 13 t r npn mje181/182 pnp mje171/172 0.02 t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal jc (t) = r(t) jc jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) figure 4. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 0 (single pulse)
MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) http://onsemi.com 4 10 v ce , collector?emitter voltage (volts) 0.01 30 2.0 5.0 0.1 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo figure 5. mje171, mje172 500 s 5.0ms dc 1.0 20 10 50 5.0 3.0 2.0 1.0 100 100 s t j = 150 c i c , collector current (amp) v ce , collector?emitter voltage (volts) 0.01 figure 6. mje181, mje182 i c , collector current (amp) mje171 mje172 0.02 0.05 0.2 0.5 30 20 10 50 5.0 3.0 2.0 1.0 100 10 2.0 5.0 0.1 1.0 0.02 0.05 0.2 0.5 70 100 s 500 s 5.0ms dc mje181 mje182 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo t j = 150 c 7.0 active?region safe operating area there are two limitations on the power handling ability of a transistor ? average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 7. turn?off time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 10 50 70 100 30 figure 8. capacitance 50 20 10 5.0 3.0 2.0 1.0 0.5 c, capacitance (pf) 0.7 t j = 25 c c ib c ob npn mje181/182 pnp mje171/172 pnp mje171/mje172 npn mje181/mje182 20 30 7.0
MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) http://onsemi.com 5 ordering information device package shipping MJE170 to?225 500 units / box MJE170g to?225 (pb?free) mje171 to?225 mje171g to?225 (pb?free) mje172 to?225 mje172g to?225 (pb?free) mje180 to?225 mje180g to?225 (pb?free) mje181 to?225 mje181g to?225 (pb?free) mje182 to?225 mje182g to?225 (pb?free)
MJE170, mje171, mje172 (pnp), mje180, mje181, mje182 (npn) http://onsemi.com 6 package dimensions style 1: pin 1. emitter 2. collector 3. base to?225 case 77?09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077?01 thru ?08 obsolete, new standard 077?09. ?b? ?a? m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 ??? 1.02 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mje171/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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